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Topography measurements of the critical thickness of ZnSe grown on GaAs
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Appl Phys Lett
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[1]
Topography measurements of the critical thickness of ZnSe grown on GaAs
Horsburgh, G
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Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
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APPLIED PHYSICS LETTERS,
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[2]
Measurements by X-ray topography of the critical thickness of ZnSe grown on GaAs
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LEE, CD
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In situ x-ray topography measurements of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs
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FERROMAGNETIC-RESONANCE MEASUREMENTS ON EPITAXIAL GROWN FE/ZNSE AND CO/ZNSE FILMS ON GAAS SUBSTRATES
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[10]
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机构:
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