Topography measurements of the critical thickness of ZnSe grown on GaAs

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 24卷 / 3148期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells
    Zhang, XB
    Briot, O
    Gil, B
    Aulombard, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 184 - 187
  • [32] Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness
    Kordos, P
    Marso, M
    Luysberg, M
    APPLIED PHYSICS LETTERS, 1998, 72 (15) : 1851 - 1853
  • [33] Islands and critical thickness of InAs grown by MBE on nominally- and misoriented GaAs substrates
    Sasaki, A
    THIN SOLID FILMS, 1995, 267 (1-2) : 24 - 31
  • [34] Optical investigation of critical thickness and interface fluctuation in CdSe/ZnSe strained layer superlattices grown on InP
    Nabetani, Yoichi
    Ishibe, Isao
    Sugiyama, Kazuki
    Kato, Takamasa
    Matsumoto, Takashi
    1600, JJAP, Tokyo, Japan (39):
  • [35] Optical investigation of critical thickness and interface fluctuation in CdSe/ZnSe strained layer superlattices grown on InP
    Nabetani, Y
    Ishibe, I
    Sugiyama, K
    Kato, T
    Matsumoto, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (5A): : 2541 - 2545
  • [36] Photoreflectance, reflectivity and photoluminescence of MOVPE grown ZnSe/GaAs epilayers and ZnSeS/ZnSe superlattices
    Boemare, C
    Nazare, MH
    Taudt, W
    Sollner, J
    Heuken, M
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 567 - 571
  • [37] Property of molecular beam epitaxy-grown ZnSe/GaAs
    Kim, Eundo
    Son, Young-Ho
    Cho, Seong Jin
    Hwang, Do Weon
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2007, 17 (02): : 52 - 56
  • [38] CONTROL OF OPTOELECTRONIC PROPERTIES OF ZNSE FILMS GROWN ON GAAS BY VPE
    LILLEY, P
    CZERNIAK, MR
    NICHOLLS, JE
    DAVIES, JJ
    JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 161 - 166
  • [39] Initial roughness and relaxation behaviour of MBE grown ZnSe/GaAs
    Buda, B
    Leifeld, O
    Vollmeke, S
    Schmilgus, F
    As, DJ
    Schikora, D
    Lischka, K
    ACTA PHYSICA POLONICA A, 1996, 90 (05) : 997 - 1001
  • [40] CHARACTERIZATION OF HETEROEPITAXIAL ZNSE GROWN BY MBE ON GAAS, ALAS AND INGAAS
    SKROMME, BJ
    TAMARGO, MC
    TURCO, FS
    SHIBLI, SM
    BONNER, WA
    NAHORY, RE
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 205 - 210
12345