ROLE OF COLLECTIVE PROCESSES IN THE FORMATION OF PRIMARY RADIATION DEFECTS.

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作者：
Panov, V.I.
Smirnov, L.S.
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| 1973年 / 7卷 / 01期
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摘要：
Study of temperature dependence of the threshold (displacement) energy of silicon was carried out to develop further the theory of primary radiation defect formation as a result of local excitation of lattice atoms.
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页码：154 / 156
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