STUDY OF PRIMARY AND SECONDARY RADIATION DEFECTS FORMATION AND ANNEALING IN PARA-TYPE SILICON

被引：6
|
作者：
MUKASHEV, BN [1 ]
KOLODIN, LG [1 ]
NUSSUPOV, KH [1 ]
SPITSYN, AV [1 ]
VAVILOV, VS [1 ]
机构：
[1] PN LEBEDEV PHYS INST,MOSCOW,USSR
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 46卷 / 1-2期
关键词：
D O I：
10.1080/00337578008209154
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The creation and annealing of defects introduced at 78 and 280 K by 2 MeV electron of p-type silicon doped either by boron or by aluminum have been studied by using Hall effect, conductively and minority carrier diffusion length measurements. An analysis of kinetics of defect annealing and its correlation with published EPR spectra. IR absortion band and capacitance measurements, the mechanism of defect annealing and origin of some electronic levels are discussed.
引用
收藏
页码：79 / 84
页数：6
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