ELECTROCHEMICAL C-V METHOD FOR DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILE.

被引：0

|

作者：

Shao Yongfu

Chen Ziyao

Peng Ruiwa

机构：

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1982年 / 3卷 / 03期

关键词：

SEMICONDUCTOR IMPURITY PROFILE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

页码：215 / 221

相关论文

共 50 条

[21] SILICON IMPURITY DISTRIBUTION AS REVEALED BY PULSED MOS C-V MEASUREMENTS
VANGELDER, W
NICOLLIAN, EH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 138 - +
[22] DETERMINATION OF IMPURITY AND MOBILITY DISTRIBUTIONS IN EPITAXIAL SEMICONDUCTING-FILMS ON INSULATING SUBSTRATE BY C-V AND Q-V ANALYSIS
LEHOVEC, K
APPLIED PHYSICS LETTERS, 1974, 25 (05) : 279 - 281
[23] SIMPLIFICATIONS OF C-V METHOD FOR METAL-INSULATOR-SEMICONDUCTOR STRUCTURE AND ESTIMATION OF INTERNAL CONSTANTS
USHIROKA.A
WARASHIN.M
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1972, 54 (03): : 98 - &
[24] Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films
CHENG Xiang~(1)
2. Institute of Nano Mater. and Technol.
Semiconductor Photonics and Technology, 2004, (04) : 252 - 255
[25] Determination of the Contact Potential Difference PHI MS Metal-Semiconductor by the Method of Analysis of the C-V Characteristics of a MIS Capacitor.
Jakubowski, Andrzej
Elektronika Warszawa, 1980, 21 (10): : 15 - 18
[26] GRAPHIC METHOD OF SUBSTRATE DOPING DETERMINATION FROM C-V CHARACTERISTICS OF MIS CAPACITORS
JAKUBOWSKI, A
SOLID-STATE ELECTRONICS, 1981, 24 (10) : 985 - 987
[27] INTERPRETATION OF C-V MEASUREMENTS FOR DETERMINING THE DOPING PROFILE IN SEMICONDUCTORS
BACCARANI, G
RUDAN, M
SPADINI, G
MAES, H
VANDERVORST, W
VANOVERSTRAETEN, R
SOLID-STATE ELECTRONICS, 1980, 23 (01) : 65 - 71
[28] PULSE C-V METHOD FOR INVESTIGATING DEEP LEVELS IN SURFACE-LAYER OF A SEMICONDUCTOR IN A METAL-OXIDE-SEMICONDUCTOR STRUCTURE
KOLESHKO, VM
KAPLAN, GD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1337 - 1339
[29] C-V characteristics of piezotronic metal-insulator-semiconductor transistor
Zheng, Jiayang
Zhou, Yongli
Zhang, Yaming
Li, Lijie
Zhang, Yan
SCIENCE BULLETIN, 2020, 65 (02) : 161 - 168
[30] AIR AS AN ADJUSTABLE INSULATOR FOR C-V AND G-V ANALYSIS OF SEMICONDUCTOR SURFACES
MORELAND, J
DRUCKER, J
HANSMA, PK
KOTTHAUS, JP
ADAMS, A
KVAAS, R
APPLIED PHYSICS LETTERS, 1984, 45 (01) : 104 - 106

← 1 2 3 4 5 →