Reaction constants for main cationic native defects in narrow-gap Hg 1-xCdxTe crystals

被引：0

作者：

Bogoboyashchyy, V.V. ^{[1
]}

Kurbanov, K.R. ^{[2
]}

机构：

[1] Kremenchuk Stt. Polytech. University, 20 Pershotravneva Street, Kremenchuk 39614, Ukraine

[2] Inst. of Econ. and New Technologies, 24/37 Proletars'ka Street, Kremenchuk 39614, Ukraine

来源：

Journal of Alloys and Compounds | 2004年 / 371卷 / 1-2期

关键词：

Annealing - Carrier concentration - Crystals - Diffusion - Doping (additives) - Electrochemistry - Ingots - Ionization - Point defects - Semiconductor materials - Tellurium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The equilibrium defect structure of Hg1-xCdxTe crystals and the diffusion of mercury in this material have been investigated. The results are presented. The results were obtained by using an optical method for free carrier concentration measurements at T300K. A new model for mercury diffusion was used, taking into account the effect of charged defect electric drift. As result, a consistent system of reaction constants for mercury vacancies and the mercury interstitials in Hg1-xCdxTe crystals has been obtained. © 2003 Elsevier B.V. All rights reserved.

引用

页码：97 / 99

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