Reaction constants for main cationic native defects in narrow-gap Hg 1-xCdxTe crystals

被引：0
|
作者：
Bogoboyashchyy, V.V. [1 ]
Kurbanov, K.R. [2 ]
机构：
[1] Kremenchuk Stt. Polytech. University, 20 Pershotravneva Street, Kremenchuk 39614, Ukraine
[2] Inst. of Econ. and New Technologies, 24/37 Proletars'ka Street, Kremenchuk 39614, Ukraine
来源：
Journal of Alloys and Compounds | 2004年 / 371卷 / 1-2期
关键词：
Annealing - Carrier concentration - Crystals - Diffusion - Doping (additives) - Electrochemistry - Ingots - Ionization - Point defects - Semiconductor materials - Tellurium;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The equilibrium defect structure of Hg1-xCdxTe crystals and the diffusion of mercury in this material have been investigated. The results are presented. The results were obtained by using an optical method for free carrier concentration measurements at T300K. A new model for mercury diffusion was used, taking into account the effect of charged defect electric drift. As result, a consistent system of reaction constants for mercury vacancies and the mercury interstitials in Hg1-xCdxTe crystals has been obtained. © 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：97 / 99
相关论文
共 50 条
  • [21] Spectra and kinetics of THz photoconductivity in narrow-gap Hg1-xCdxTe (x < 0.2) epitaxial films
    Rumyantsev, V. V.
    Morozov, S. V.
    Antonov, A. V.
    Zholudev, M. S.
    Kudryavtsev, K. E.
    Gavrilenko, V. I.
    Dvoretskii, S. A.
    Mikhailov, N. N.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (12)
  • [22] Activation-controlled conduction and metal-insulator transition in the impurity band of narrow-gap p-Hg1-xCdxTe doped crystals
    Bogoboyashchii, VV
    Gasan-zade, SG
    Shepel'skii, GA
    SEMICONDUCTORS, 2000, 34 (04) : 398 - 404
  • [23] Magneto-conductance spectroscopy of a narrow-gap Hg1-xCdxTe (x approximate to 0.2) MIS device
    Zvara, M
    Grill, R
    Hlidek, P
    Hoschl, P
    Lang, M
    Lischka, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) : 1718 - 1724
  • [24] Optical absorption and photoluminescence of narrow-gap Hg1-x-yCdxMnySe single crystals
    Mazur, YI
    Tarasov, GG
    Lavorik, SR
    Tomm, JW
    Kissel, H
    Hoerstel, W
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 195 (02): : 595 - 609
  • [25] The method for calculation of carrier concentration in narrow-gap n-type doped Hg1-xCdxTe structures
    Jozwikowska, Alina
    Jozwikowski, Krzysztof
    Suligowski, Mariusz
    Moszczynski, Pawel
    Nietopiel, Michal
    OPTICAL AND QUANTUM ELECTRONICS, 2017, 49 (03)
  • [26] INVESTIGATION ON ELECTRICAL-PROPERTIES OF NARROW-GAP N-HG1-XCDXTE UNDER HYDROSTATIC-PRESSURE
    LIU, R
    SHEN, XC
    CHINESE PHYSICS, 1988, 8 (03): : 763 - 770
  • [27] THE LATTICE IMAGE OF THE DEFECTS IN HG1-XCDXTE CRYSTALS
    MA, KJ
    SHEN, J
    SONG, XY
    WEN, SL
    CHINESE PHYSICS, 1986, 6 (04): : 849 - 852
  • [28] Ultra-High Mobility and Temperature-Dependent Carrier Dynamics in Narrow-Gap Hg1-xCdxTe Films
    Refvik, Nils B.
    Purschke, David N.
    Pan, Wenwu
    Jensen, Charles E.
    Simpson, Howe R. J.
    Lei, Wen
    Gu, Renjie
    Antoszewski, Jarek
    Umana-Membreno, Gilberto A.
    Faraone, Lorenzo
    Hegmann, Frank A.
    2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022), 2022,
  • [29] STRIPLINE-TYPE PHOTODETECTOR BASED ON THE NARROW-GAP TERNARY COMPOUND Hg1-xCdxTe FOR THE FAR IR REGION
    Lepikh, Ya. I.
    Ivanchenko, I. A.
    Budiyanskaya, L. M.
    JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS, 2013, 86 (01) : 242 - 247
  • [30] Interconsistent band structure of narrow-gap Hg1-xCdxTe alloys obtained with taking into account of far band influence
    Bogoboyashchiy, V
    MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1997, 3182 : 325 - 335
12345