Reaction constants for main cationic native defects in narrow-gap Hg 1-xCdxTe crystals

被引:0
|
作者
Bogoboyashchyy, V.V. [1 ]
Kurbanov, K.R. [2 ]
机构
[1] Kremenchuk Stt. Polytech. University, 20 Pershotravneva Street, Kremenchuk 39614, Ukraine
[2] Inst. of Econ. and New Technologies, 24/37 Proletars'ka Street, Kremenchuk 39614, Ukraine
来源
Journal of Alloys and Compounds | 2004年 / 371卷 / 1-2期
关键词
Annealing - Carrier concentration - Crystals - Diffusion - Doping (additives) - Electrochemistry - Ingots - Ionization - Point defects - Semiconductor materials - Tellurium;
D O I
暂无
中图分类号
学科分类号
摘要
The equilibrium defect structure of Hg1-xCdxTe crystals and the diffusion of mercury in this material have been investigated. The results are presented. The results were obtained by using an optical method for free carrier concentration measurements at T300K. A new model for mercury diffusion was used, taking into account the effect of charged defect electric drift. As result, a consistent system of reaction constants for mercury vacancies and the mercury interstitials in Hg1-xCdxTe crystals has been obtained. © 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:97 / 99
相关论文
共 50 条
  • [1] Reaction constants for main cationic native defects in narrow-gap Hg1-xCdxTe crystals
    Bogoboyashchyy, VV
    Kurbanov, KR
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) : 97 - 99
  • [2] Defect structure and diffusion of defects in narrow-gap Hg1-xCdxTe crystals
    Bogoboyashchyy, VV
    SIXTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 2003, 5065 : 208 - 218
  • [3] PHOTOREFLECTANCE IN NARROW-GAP HG1-XCDXTE AND HG1-YZNYTE
    AMIRTHARAJ, PM
    KENNEDY, JJ
    BOYD, PR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3184 - 3185
  • [4] RECOMBINATION EFFECTS IN NARROW-GAP SEMICONDUCTORS P-HG1-XCDXTE
    VOITSEKHOVSKII, AV
    LILENKO, YV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02): : 381 - 386
  • [5] NATURE OF LASER-EMISSION IN NARROW-GAP HG1-XCDXTE
    HERRMANN, KH
    TOMM, JW
    LINDSTAEDT, M
    INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (01) : 133 - 143
  • [6] RESONANCE RAMAN-SCATTERING STUDY OF NARROW-GAP HG1-XCDXTE
    KSENDZOV, A
    POLLAK, FH
    AMIRTHARAJ, PM
    WILSON, JA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S78 - S80
  • [7] CHARACTERIZATION UNDER HYDROSTATIC-PRESSURE OF NARROW-GAP HG1-XCDXTE AND HG1-XZNXTE
    GONTHIER, JC
    RAYMOND, A
    ROBERT, JL
    TRIBOULET, R
    FAURIE, JP
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S217 - S220
  • [8] CARRIER DECAY LIFETIMES IN THE NARROW-GAP Hg1-xCdxTe AT THE INTERBAND AND INTRABAND EXCITATIONS
    Staryi, S.
    Lysjuk, I.
    Golenkov, O.
    Tsybrii, Z.
    Danilov, S.
    Gumenjuk-Sichevska, J.
    Andrieieva, K.
    Smolii, M.
    Sizov, F.
    UKRAINIAN JOURNAL OF PHYSICS, 2023, 68 (08): : 543 - 548
  • [9] MAGNETIC POLARONS IN NARROW-GAP HG1-XMNX TE CRYSTALS
    GLUZMAN, NG
    LERINMAN, NK
    SABIRZYANOVA, LD
    TSIDILKOVSKII, IM
    GORBATYUK, IN
    FRASUNYAK, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (07): : 838 - 839
  • [10] BAND-TO-BAND OPTICAL-ABSORPTION IN NARROW-GAP HG1-XCDXTE SEMICONDUCTORS
    CHU, JH
    MI, ZY
    TANG, DY
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) : 3955 - 3961