Spatial distributions of densely contact-electrified charges on a thin silicon oxide

被引：0

作者：

Sugawara, Yasuhiro ^{[1
]}

Morita, Seizo ^{[1
]}

Fukano, Yoshinobu ^{[1
]}

Uchihashi, Takayuki ^{[1
]}

Okusako, Takahiro ^{[1
]}

Chayahara, Ayumi ^{[1
]}

Yamanishi, Yoshiki ^{[1
]}

Oasa, Takahiko ^{[1
]}

机构：

[1] Hiroshima Univ, Higashi-Hiroshima, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 1 A期

关键词：

Electric breakdown of solids - Electric charge - Electric losses - Electron tunneling - Microscopic examination - Surfaces;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The spatial distributions of densely contact-electrified charges on silicon oxide were investigated in air with an atomic force microscope. We found that the spatial distributions immediately after contact electrification significantly depended on the sign of the charge. The spatial distributions showed sharp peaks for positive charge but round peaks for negative charge. We conjectured that the sign dependence of the spatial distributions was induced by the forced tunneling process. We also found the other feature of the spatial distributions of the dissipated charge, which seemed to be related to premonitory phenomena of dielectric breakdown for silicon oxide.

引用

共 48 条

[21] Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grows on silicon
Kennou, S
Ladas, S
Grimaldi, MG
Tan, TAN
Veuillen, JY
APPLIED SURFACE SCIENCE, 1996, 102 : 142 - 146
[22] Time dependent dielectric breakdown of thin silicon oxide using dense contact electrification
Fukano, Yoshinobu, 1600, JJAP, Minato-ku, Japan (33):
[23] Titanium Oxide Contact Passivation Layer for Thin Film Crystalline Silicon Solar Cells
Xue, Muyu
Chen, Yusi
Jia, Jieyang
Huo, Yijie
Lu, Ching-Ying
Zang, Kai
Xu, Ke
Huang, Yen-Chieh
Chen, Xiaochi
Harris, James
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 2871 - 2873
[24] Oxide and interface charges in thin SiO2 films thermally grown on RF plasma hydrogenated silicon
Alexandrova, S
Szekeres, A
Halova, E
Lisovskyy, I
Litovchenko, V
Mazunov, D
VACUUM, 2004, 75 (04) : 301 - 305
[25] Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells
Ogutman, Kortan
Iqbal, Nafis
Gregory, Geoffrey
Li, Mengjie
Haslinger, Michael
Cornagliotti, Emanuele
Schoenfeld, Winston, V
John, Joachim
Davis, Kristopher O.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (18):
[26] A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's
Lee, RGH
Su, JS
Chung, SS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (01) : 81 - 89
[27] Contact characteristics of silicon and indium tin oxide (ITO) in polysilicon thin-film transistors
Park, WK
Kang, Y
Kim, D
Park, AK
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 48 : S1 - S4
[28] A study of contact properties between molybdenum and amorphous silicon tin oxide thin film transistors
Ning, Honglong
Liu, Xianzhe
Xu, Hua
Lu, Kuankuan
Zhang, Hongke
Zhang, Xiaochen
Yao, Rihui
Fang, Zhiqiang
Wang, Xiaofeng
Peng, Junbiao
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2018, 26 (12) : 681 - 686
[29] The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
Gerlach, D.
Wilks, R. G.
Wippler, D.
Wimmer, M.
Lozac'h, M.
Felix, R.
Mueck, A.
Meier, M.
Ueda, S.
Yoshikawa, H.
Gorgoi, M.
Lips, K.
Rech, B.
Sumiya, M.
Huepkes, J.
Kobayashi, K.
Baer, M.
APPLIED PHYSICS LETTERS, 2013, 103 (02)
[30] A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon-Oxide-Nitride-Oxide-Silicon Device for Reliable Four-Bit/Cell Operations
An, Ho-Myoung
Zhang, Yongjie
Kim, Hee-Dong
Seo, Yu Jeong
Kim, Byungcheul
Kim, Joo-Yeon
Kim, Tae Geun
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (11)

← 1 2 3 4 5 →