CHARACTERISTICS OF CdS LASER SCREEN RADIATION AT 300 degree K.

被引：0
|
作者：
Kozlovskii, V.I.
Nasibov, A.S.
Reznikov, P.V.
机构：
来源：
Soviet journal of quantum electronics | 1981年 / 11卷 / 11期
关键词：
Compendex;
D O I：
10.1070/qe1981v011n11abeh008642
中图分类号：
学科分类号：
摘要：
Lasers
引用
收藏
页码：1522 / 1526
相关论文
共 50 条
  • [21] TRANSPORT PARAMETERS OF HOT ELECTRONS IN GaAs AT 300 K.
    Gasquet, D.
    de Murcia, M.
    Nougier, J.P.
    Gontrand, C.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1985, 134 B-C (1-3): : 264 - 267
  • [22] The heat capacity of crystalline tellurium from 15 to 300 degrees K. And the entropy at 298.1 degrees K.
    Slansky, CM
    Coulter, LV
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1939, 61 : 564 - 564
  • [23] OPTICAL PROPERTIES OF IRIDIUM AT 77 AND 295 degree K.
    Kirillova, M.M.
    Nomerovannaya, L.V.
    Noskov, M.M.
    Physics of Metals and Metallography, 1972, 34 (02): : 61 - 66
  • [24] Measurement of output characteristics of Tm:YAG laser at 25-300 K
    Li, Jianguo
    Yan, Tao
    Liang, Jingtao
    Cai, Jinghui
    OPTICS COMMUNICATIONS, 2015, 334 : 118 - 121
  • [25] NOISE BEHAVIOR OF A STATIC INDUCTION TRANSISTOR BETWEEN 77 K AND 300 K.
    Gustafsson, Staffan
    Sundblad, Rolf
    Svensson, Christer
    1600, (30):
  • [26] MAGNETIC COOLING NEAR CURIE TEMPERATURES ABOVE 300 K.
    Oesterreicher, H.
    Parker, F.T.
    1600, (55):
  • [27] APPARATUS FOR MEASURING ANGULAR GAMMA-GAMMA CORRELATIONS IN SPECIMENS WITH TEMPERATURE OF 1. 5-300 degree K.
    Budzyncky, M.
    Venrek, J.
    Konicek, J.
    Lesner, T.
    Ota, I.
    Petrik, M.
    Proohazka, I.
    Soucek, O.
    Finger, M.
    Fominykh, V.I.
    Tsupko-Sitnikov, V.M.
    Simicek, P.
    Janeh, A.
    Yanout, Z.
    Instruments and experimental techniques New York, 1985, 28 (3 pt 1): : 552 - 555
  • [28] PHOTOACOUSTIC CELL FOR THE TEMPERATURE RANGE 300-1050 K.
    Bechthold, P.S.
    Journal of Photoacoustics, 1982, 1 (01): : 87 - 102
  • [29] MAGNETIC INDUCTION STANDARDS OF ALTERNATING FIELDS AT 20-1000 Hz IN THE TEMPERATURE INTERVAL FROM 77 TO 300 degree K.
    Vasil'ev, D.R.
    Measurement Techniques, 1987, 30 (05) : 477 - 480
  • [30] MOBILITY OF ELECTRONS IN CdS SINGLE CRYSTALS AT 300-1200 degree K GOVERNED BY FORMATION OF CLUSTERS AND STRUCTURAL CHANGES.
    Shtrum, E.L.
    Pekar', G.S.
    Khandros, L.I.
    Sheinkman, M.K.
    Soviet physics. Semiconductors, 1980, 14 (07): : 813 - 816
12345