Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

被引：0

作者：

Sheng, Chi ^{[1
]}

Zhou, Tiecheng ^{[1
]}

Gong, Dawai ^{[1
]}

Fan, Yongliang ^{[1
]}

Wang, Jianbao ^{[1
]}

Zhang, Xiangjiu ^{[1
]}

Wang, Xun ^{[1
]}

机构：

[1] Fudan Univ, Shanghai, China

来源：

Jiguang Zazhi/Laser Journal | 1996年 / 17卷 / 02期

关键词：

Crystal growth - Semiconducting silicon - Semiconductor materials - Semiconductor superlattices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A thin Ge islanding film inserted between SiGe buffer layer and Si substrate may greatly reduce the necessary buffer thickness to 100-200 nm maintaining the same good crystal quality. A very favorite property of Ge4/Si6 short-period superlattices successively grown on the 150 nm GeSi alloy buffers with 1 nm Ge islanding layer inserted shows that the Ge island method is valid.

引用

页码：1 / 5

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