Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

被引：0

作者：

Sheng, Chi ^{[1
]}

Zhou, Tiecheng ^{[1
]}

Gong, Dawai ^{[1
]}

Fan, Yongliang ^{[1
]}

Wang, Jianbao ^{[1
]}

Zhang, Xiangjiu ^{[1
]}

Wang, Xun ^{[1
]}

机构：

[1] Fudan Univ, Shanghai, China

来源：

Jiguang Zazhi/Laser Journal | 1996年 / 17卷 / 02期

关键词：

Crystal growth - Semiconducting silicon - Semiconductor materials - Semiconductor superlattices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A thin Ge islanding film inserted between SiGe buffer layer and Si substrate may greatly reduce the necessary buffer thickness to 100-200 nm maintaining the same good crystal quality. A very favorite property of Ge4/Si6 short-period superlattices successively grown on the 150 nm GeSi alloy buffers with 1 nm Ge islanding layer inserted shows that the Ge island method is valid.

引用

页码：1 / 5

共 50 条

[21] High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate
Myronov, M.
Leadley, D. R.
Shiraki, Y.
APPLIED PHYSICS LETTERS, 2009, 94 (09)
[22] Growth of high quality Ge epitaxial layer on Si(100) substrate using ultra thin Si0.5Ge0.5 buffer
Nakatsuru, Junko
Date, Hiroki
Mashiro, Supika
Ikemoto, Manabu
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 315 - +
[23] Strained Ge1-xSnx thin film on Ge (100) with low temperature Ge buffer layer
Yu, I. S.
Wu, K. Y.
Wang, K. Y.
Wu, T. H.
Cheng, H. H.
Ulyanov, V.
Mashanov, V. I.
Pchelyakov, O. P.
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 1329 - +
[24] Ultra-thin strain relaxed SiGe buffer layers with 40% Ge
Lyutovich, K
Kasper, E
Oehme, M
HIGH-MOBILITY GROUP-IV MATERIALS AND DEVICES, 2004, 809 : 33 - 38
[25] A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown
Zhiqian Zhao
Yongliang Li
Guilei Wang
Anyan Du
Shihai Gu
Yan Li
Qingzhu Zhang
Gaobo Xu
Xueli Ma
Xiaolei Wang
Hong Yang
Jun Luo
JunFeng Li
Huaxiang Yin
Wenwu Wang
Journal of Materials Science: Materials in Electronics, 2019, 30 : 14130 - 14135
[26] A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown
Zhao, Zhiqian
Li, Yongliang
Wang, Guilei
Du, Anyan
Gu, Shihai
Li, Yan
Zhang, Qingzhu
Xu, Gaobo
Ma, Xueli
Wang, Xiaolei
Yang, Hong
Luo, Jun
Li, JunFeng
Yin, Huaxiang
Wang, Wenwu
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (15) : 14130 - 14135
[27] Characterization of high quality RTCVD relaxed Si1-xGex grown on Ge graded buffer layers on Si by photoluminescence spectroscopy
Bremond, G
Souifi, A
DeBarros, O
Benmansour, A
Ducroquet, F
Warren, P
Dutartre, D
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (07) : 1023 - 1027
[28] Buffer layer-assisted growth of Ge nanoclusters on Si
Li, A. P.
Wendelken, J. F.
NANOSCALE RESEARCH LETTERS, 2006, 1 (01): : 11 - 19
[29] Buffer layer-assisted growth of Ge nanoclusters on Si
A. P. Li
J. F. Wendelken
Nanoscale Research Letters, 1
[30] PHOTOLUMINESCENCE IN SHORT-PERIOD SI/GE STRAINED LAYER SUPERLATTICES GROWN ON SI AND GE SUBSTRATES
ZACHAI, R
EBERL, K
ABSTREITER, G
KASPER, E
KIBBEL, H
SURFACE SCIENCE, 1990, 228 (1-3) : 267 - 269

← 1 2 3 4 5 →