MEASUREMENT OF RADIATION-INDUCED INTERFACE TRAPS USING MOSFETs.

被引：0

作者：

Gaitan, M. ^{[1
]}

Russell, T.J. ^{[1
]}

机构：

[1] NBS, Semiconductor Devices &, Circuits Div, Washington, DC, USA, NBS, Semiconductor Devices & Circuits Div, Washington, DC, USA

来源：

IEEE Transactions on Nuclear Science | 1984年 / NS-31卷 / 06期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR DEVICES, MOSFET

引用

页码：1256 / 1260

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