MEASUREMENT OF RADIATION-INDUCED INTERFACE TRAPS USING MOSFETs.

被引：0
|
作者：
Gaitan, M. [1 ]
Russell, T.J. [1 ]
机构：
[1] NBS, Semiconductor Devices &, Circuits Div, Washington, DC, USA, NBS, Semiconductor Devices & Circuits Div, Washington, DC, USA
来源：
IEEE Transactions on Nuclear Science | 1984年 / NS-31卷 / 06期
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摘要：
SEMICONDUCTOR DEVICES, MOSFET
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页码：1256 / 1260
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