FABRICATION OF POWER SEMICONDUCTOR DEVICES.

被引:0
|
作者
Tuchkevich, V.M.
Tepman, I.A.
Kovalev, F.I.
Yakivchik, N.I.
机构
来源
Soviet electrical engineering | 1980年 / 51卷 / 01期
关键词
714 Electronic Components and Tubes;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:67 / 75
相关论文
共 50 条
  • [21] Silicon carbide power devices.
    Chante, JP
    Locatelli, ML
    Planson, D
    Ottaviani, L
    Morvan, E
    Isoird, K
    Nallet, F
    CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 1998, : 125 - 134
  • [22] TRANSMISSION ELECTRON MICROSCOPY OF SEMICONDUCTOR MATERIALS AND DEVICES.
    Marcus, R.B.
    Scanning Electron Microscopy, 1985, v : 1001 - 1009
  • [23] SIMPLE METHOD OF ASSESSING THE RELIABILITY OF SEMICONDUCTOR DEVICES.
    Candade, Vittal S.
    QR journal, 1985, 12 (02): : 61 - 64
  • [24] PHOTOLITHOGRAPHY AND ELECTROLITHOGRAPHY FOR FINE GEOMETRY SEMICONDUCTOR DEVICES.
    Singh, Amarjit
    IETE Journal of Research, 1980, 26 (11) : 540 - 545
  • [25] Application of Ion Implantation to the Manufacture of Semiconductor Devices.
    Saczuk, Krzysztof
    1600, (13):
  • [26] TECHNIQUE FOR PLANARIZATION OF MULTILEVEL METALLIZATION FOR SEMICONDUCTOR DEVICES.
    Vossen Jr., John Louis
    RCA technical notes, 1984, (1348):
  • [27] Fast Determination of the Thermal Resistance of Semiconductor Devices.
    Poehlmann, Bernd
    Elektronik Munchen, 1980, 29 (22): : 125 - 127
  • [28] FUTURE DEMAND FOR GALLIUM ARSENIDE SEMICONDUCTOR DEVICES.
    Jones, S.
    Thomas, C.B.
    Wilshire, B.
    Metals and Materials (Institute of Metals), 1986, 2 (06): : 353 - 356
  • [29] FABRICATION OF DIELECTRIC SPACER FOR GARNET BUBBLE DEVICES.
    Sadagopan, V.
    Taylor, R.C.
    IBM Technical Disclosure Bulletin, 1972, 15 (05):
  • [30] Diamond power devices. Concepts and limits
    Denisenko, A
    Kohn, E
    DIAMOND AND RELATED MATERIALS, 2005, 14 (3-7) : 491 - 498