BOUND EXCITONS IN CdS.

被引：0
|
作者：
Dawson, P.
Dunstan, D.J.
Cavenett, B.C.
机构：
来源：
| 1978年 / 4卷 / 1-2期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING CADMIUM COMPOUNDS
引用
收藏
页码：91 / 99
相关论文
共 50 条
  • [21] BOUND EXCITONS IN SURFACE LAYERS OF CdS SINGLE CRYSTALS.
    Benemanskaya, G.V.
    Novikov, B.V.
    Cherednichenko, A.E.
    1978, 20 (06): : 1042 - 1044
  • [22] PICOSECOND QUANTUM-BEAT SPECTROSCOPY OF BOUND EXCITONS IN CDS
    STOLZ, H
    LANGER, V
    SCHREIBER, E
    PERMOGOROV, S
    VONDEROSTEN, W
    PHYSICAL REVIEW LETTERS, 1991, 67 (06) : 679 - 682
  • [23] EVIDENCE FOR SO2 FORMATION ON CdS.
    Karve, P.P.
    Khasbag, A.K.
    Kolhe, S.P.
    Nigavekar, A.S.
    Kulkarni, S.K.
    1600, (23):
  • [24] THE DIPOLE-MOMENT INTERACTION OF BOUND EXCITONS IN HIGHLY EXCITED CDS
    BAO, QC
    DAI, RS
    XU, XR
    JOURNAL DE PHYSIQUE, 1985, 46 (C-7): : 221 - 225
  • [25] System of excitons bound at oxygen centers and stimulated emission of CdS crystals
    Morozova, N. K.
    Abbasov, I. I.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2022, 36 (22):
  • [26] FREE AND BOUND EXCITONS IN CDS CRYSTALS AND MESSBAUERS EFFECT ANALOGUE IN OPTICS
    GROSS, EF
    RAZBIRIN, BC
    PERMOGOROV, SA
    DOKLADY AKADEMII NAUK SSSR, 1962, 147 (02): : 338 - &
  • [27] A STUDY OF THE DEEP ELECTRON TRAPS IN SEMICONDUCTING CdS.
    Grill, C.
    Bastide, G.
    Sagnes, G.
    Rouzeyre, M.
    1600, (50):
  • [28] ELECTRON SPIN RESONANCE OF SHALLOW DONORS IN CdS.
    Bratus', V.Ya.
    Zaritskii, I.M.
    Pekar', G.S.
    Khandros, L.I.
    Shtrum, E.L.
    Soviet physics. Semiconductors, 1980, 14 (07): : 790 - 792
  • [29] ELECTRON TRAPS IN SINGLE-CRYSTAL CdS.
    Claybourn, M.
    Brinkman, A.W.
    Russell, G.J.
    Woods, J.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1987, 56 (03): : 385 - 395
  • [30] INFLUENCE OF TEMPERATURE ON THE GREEN EDGE LUMINESCENCE OF CdS.
    Dyakin, V.V.
    Rizakhanov, M.A.
    Khilimova, N.N.
    Sheinkman, M.K.
    Soviet physics. Semiconductors, 1980, 14 (04): : 407 - 409
12345