A STUDY OF THE DEEP ELECTRON TRAPS IN SEMICONDUCTING CdS.

被引：0

作者：

Grill, C. ^{[1
]}

Bastide, G. ^{[1
]}

Sagnes, G. ^{[1
]}

Rouzeyre, M. ^{[1
]}

机构：

[1] Centre d'Etudes d'Electronique des Solides, Associé au C.N.R.S. U.S.T.L., 34060, Montpellier, Cedex, France

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| 1600年 / 50期

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[1] STUDY OF THE DEEP ELECTRON TRAPS IN SEMICONDUCTING CDS
GRILL, C
BASTIDE, G
SAGNES, G
ROUZEYRE, M
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1375 - 1380
[2] ELECTRON TRAPS IN SINGLE-CRYSTAL CdS.
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[3] DEEP LEVELS DUE TO DISLOCATIONS IN CdS.
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[4] ELECTRON SPIN RESONANCE OF SHALLOW DONORS IN CdS.
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Pekar', G.S.
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[5] PHYSICAL PROPERTIES OF THE DEEP X ELECTRON TRAP RESPONSIBLE FOR LONG TIME PERSISTENT PHOTOCAPACITANCE IN CdS.
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[6] BOUND EXCITONS IN CdS.
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[7] Nanowires of PbSe and CdS.
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[8] ORANGE LUMINESCENCE IN CdS.
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[9] Injection mould for CDs.
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[10] Future of the CDS. Community Dental Service
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