A STUDY OF THE DEEP ELECTRON TRAPS IN SEMICONDUCTING CdS.

被引：0

作者：

Grill, C. ^{[1
]}

Bastide, G. ^{[1
]}

Sagnes, G. ^{[1
]}

Rouzeyre, M. ^{[1
]}

机构：

[1] Centre d'Etudes d'Electronique des Solides, Associé au C.N.R.S. U.S.T.L., 34060, Montpellier, Cedex, France

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| 1600年 / 50期

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[31] SPACE-CHARGE-LIMITED CURRENTS AND ELECTRON TRAPS IN CDS CRYSTALS
MARLOR, GA
WOODS, J
BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (10): : 1449 - &
[32] SPECTROSCOPIC INVESTIGATIONS OF THE PHOTOPLASTIC EFFECT DUE TO alpha AND beta DISLOCATIONS IN CdS.
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1600, (19):
[33] CURRENT NOISE INDUCED BY ELECTRON-PHONON INTERACTION IN SEMICONDUCTING CDS CRYSTALS
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[34] Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures
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[35] STUDY OF ACOUSTOELECTRIC DOMAINS IN SEMICONDUCTING CDS BY OPTICAL MODULATION TECHNIQUE
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[36] DEEP ELECTRON TRAPS IN UNDOPED GAAS GROWN BY MOCVD
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IKEDA, E
AKATSU, Y
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05): : L296 - L298
[37] ACOUSTOELECTRIC EFFECT IN SEMICONDUCTING CDS
MANY, A
BALBERG, I
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 474 - &
[38] Thermoluminescence of deep electron and hole traps in irradiated sapphire
Flerov, V
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PROCEEDINGS OF THE 13TH INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS - ICDIM 96, 1997, 239- : 757 - 760
[39] DEEP ELECTRON TRAPS NEAR THE PASSIVATED INTERFACE OF HGCDTE
COTTON, VA
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JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2208 - 2211
[40] DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON
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PHYSICAL REVIEW B, 1981, 24 (12): : 7457 - 7459

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