Analysis of hot-carrier degradation in small and large W/L n-channel transistors

被引：0

作者：

Bendada, E. ^{[1
]}

Rais, K. ^{[1
]}

机构：

[1] Universute My Ismail-F.S.T., Errachidia, Morocco

来源：

Active and Passive Electronic Components | 1998年 / 21卷 / 03期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：189 / 198

共 50 条

[21] Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates
Huttner, T
Mahnkopf, R
Wurzer, H
Pindl, S
Abstreiter, G
1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 66 - 67
[22] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS
NG, KK
TAYLOR, GW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 871 - 876
[23] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS
NG, KK
TAYLOR, GW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1701 - 1701
[24] Hot-Carrier Degradation in Low-Temperature Polycrystalline Silicon n-Channel Lightly Doped Drain Thin-Film Transistors
Hirata, Seishiro
Yamagata, Masahiro
Satoh, Toshifumi
Tango, Hiroyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (01)
[25] HOT-CARRIER DEGRADATION BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS UNDER DYNAMIC OPERATION CONDITIONS
BELLENS, R
GROESENEKEN, G
HEREMANS, P
MAES, HE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) : 1421 - 1428
[26] Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
Lee, Ming-Hsien
Chang, Kai-Hsiang
Lin, Horng-Chih
Journal of Applied Physics, 2007, 101 (05):
[27] Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
Lee, Ming-Hsien
Chang, Kai-Hsiang
Lin, Horng-Chih
JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
[28] Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain N-channel metal-oxide-semiconductor field effect transistors
Goo, Jung-Suk, 1600, Publ by JJAP, Minato-ku, Japan (33):
[29] The role of the buried oxide in the hot-carrier degradation of ultra thin n-channel SOI-MOSFETs
Huttner, T
Mahnkopf, R
Wurzer, H
Biebl, M
Abstreiter, G
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 277 - 282
[30] MICRONIC N-CHANNEL MOSFET DEGRADATION UNDER STRONG AND SHORT-TIME HOT-CARRIER STRESS
DJAHLI, F
PLOSSU, C
BALLAND, B
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 15 (02): : 164 - 168

← 1 2 3 4 5 →