Energy distribution functions of ions impacted on a negatively biased substrate in an electron cyclotron resonance microwave plasma

被引:0
|
作者
Dept. of Elec. and Electron. Eng., Saga University, 1 Honjo-machi, Saga 840-8502, Japan [1 ]
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Lost electron energy distribution of electron cyclotron resonance ion sources
    Izotov, I.
    Skalyga, V.
    Tarvainen, O.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2022, 93 (04):
  • [42] VELOCITY DISTRIBUTION OF ELECTRONS IN AN ELECTRON-CYCLOTRON RESONANCE PLASMA
    GREENE, DGS
    SHOHET, JL
    PLASMA PHYSICS AND CONTROLLED FUSION, 1973, 15 (01) : 5 - 19
  • [43] Investigation of the electron distribution functions in low pressure electron cyclotron resonance discharges
    Kaganovich, I
    Misina, M
    Bogaerts, A
    Gijbels, R
    ADVANCED TECHNOLOGIES BASED ON WAVE AND BEAM GENERATED PLASMAS, 1999, 67 : 543 - 544
  • [44] ELONGATED MICROWAVE ELECTRON-CYCLOTRON RESONANCE HEATING PLASMA SOURCE
    GEISLER, M
    KIESER, J
    RAUCHLE, E
    WILHELM, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 908 - 915
  • [45] Langmuir probe diagnostics of microwave electron cyclotron resonance (ECR) plasma
    Singh, S. B.
    Chand, N.
    Patil, D. S.
    VACUUM, 2008, 83 (02) : 372 - 377
  • [47] ELECTRON-CYCLOTRON-RESONANCE PLASMA AS A SOURCE OF MULTIPLY CHARGED IONS
    BERNHARDI, K
    FUCHS, G
    GOLDMAN, MA
    HERBERT, HC
    WALCHER, W
    WIESEMANN, K
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (02) : 999 - 1005
  • [48] IMPURITY IONS IN A PLASMA PRODUCED BY ELECTRON-CYCLOTRON RESONANCE HEATING
    YONESU, A
    KOMORI, A
    KAWAI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (08): : 1482 - 1487
  • [49] INFLUENCE OF A DIRECT-CURRENT BIAS ON THE ENERGY OF IONS FROM AN ELECTRON-CYCLOTRON RESONANCE PLASMA
    REINKE, P
    SCHELZ, S
    JACOB, W
    MOLLER, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (03): : 434 - 438
  • [50] Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma
    Ensinger, W
    Volz, K
    Schrag, G
    Stritzker, B
    Rauschenbach, B
    APPLIED PHYSICS LETTERS, 1998, 72 (10) : 1164 - 1166