Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions

被引：0

作者：

Martin, F. ^{[1
]}

Aymerich, X. ^{[1
]}

机构：

[1] Universitat Autonoma de Barcelona, Bellaterra, Spain

来源：

Microelectronics Journal | 1991年 / 22卷 / 7-8期

关键词：

Charge transport - Fowler-Nordheim injection conditions - MNOS devices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：5 / 17

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