Coadsorption of C and Si atoms, Si and S atoms, and S and C atoms on a (100) Mo surface

被引:0
|
作者
Gall', N. R.
Rut'kov, E. V.
Tontegode, A. Y.
Usufov, M. M.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Interaction of cobalt atoms with an oxidized Si(100)2 × 1 surface
    M. V. Gomoyunova
    I. I. Pronin
    D. E. Malygin
    N. R. Gall’
    D. V. Vyalykh
    S. L. Molodtsov
    Physics of the Solid State, 2005, 47 : 1980 - 1985
  • [32] Investigation of the interaction between C60 and Si atoms
    Tanaka, H
    Onoe, J
    Hara, T
    Nakao, A
    Takeuchi, K
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2000, 340 : 701 - 705
  • [33] Electronic transport properties of tetracyclopentadienyl modified with C and Si atoms
    Yang, Li-Hua
    Yang, Chuan-Lu
    Wang, Mei-Shan
    Ma, Xiao-Guang
    PHYSICS LETTERS A, 2015, 379 (30-31) : 1726 - 1731
  • [34] Adsorption of Si and C atoms over SiC (111) surfaces
    Vivas, PG
    da Silva, EE
    de Carvalho, LC
    Alves, JLA
    Alves, HWL
    Scolfaro, LMR
    Leite, JR
    BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (02) : 396 - 398
  • [35] The role of Si atoms in In/Si(111) surface phase formation
    Saranin, AA
    Zotov, AV
    Lifshits, VG
    Numata, T
    Kubo, O
    Tani, H
    Katayama, M
    Oura, K
    SURFACE SCIENCE, 1998, 398 (1-2) : 60 - 69
  • [36] Behaviors of surfactant atoms on Si(001) surface
    Matsuhata, H
    Sakamoto, K
    Miki, K
    JOURNAL OF ELECTRON MICROSCOPY, 2004, 53 (04): : 325 - 337
  • [37] Ordering of the Si(553) surface with Pb atoms
    Kopciuszynski, M.
    Lukasik, P.
    Zdyb, R.
    Jalochowski, M.
    APPLIED SURFACE SCIENCE, 2014, 305 : 139 - 142
  • [38] Evolution behavior of C and Si atoms on diamond (001) surface: A first principle study
    Ren, Yuan
    Liu, Xuejie
    Wei, Huai
    APPLIED SURFACE SCIENCE, 2015, 346 : 464 - 469
  • [39] Single hydrogen atoms on the Si(001) surface
    Radny, M. W.
    Smith, P. V.
    Reusch, T. C. G.
    Warschkow, O.
    Marks, N. A.
    Wilson, H. F.
    Schofield, S. R.
    Curson, N. J.
    McKenzie, D. R.
    Simmons, M. Y.
    PHYSICAL REVIEW B, 2007, 76 (15)
  • [40] Surface migration of Si atoms based on the kinetics of a Si microcluster on a Si(003) surface
    Doi, T
    Ichikawa, M
    Hosoki, S
    Ninomiya, K
    SURFACE SCIENCE, 1996, 351 (1-3) : 135 - 140