Ordering of the Si(553) surface with Pb atoms

被引：9
|
作者：
Kopciuszynski, M. [1 ]
Lukasik, P. [1 ]
Zdyb, R. [1 ]
Jalochowski, M. [1 ]
机构：
[1] Marie Curie Sklodowska Univ, Inst Phys, PL-20031 Lublin, Poland
来源：
APPLIED SURFACE SCIENCE | 2014年 / 305卷
关键词：
Vicinal Si; Si(553); Pb; RHEED; GROWTH; SI(111); SI(533);
D O I：
10.1016/j.apsusc.2014.03.009
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The crystallographic structure and morphology of the Si( 5 5 3) surface covered with Pb atoms are investigated with the reflection high energy electron diffraction (RHEED) technique. A regular distribution of steps over a macroscopic sample area is obtained after the adsorption of more than 1.3 monolayers Pb and subsequent annealing. The details of preparation of the ordered surface together with a diffraction model explaining the observed RHEED patterns are presented. The applied model predicts main diffraction features observed with RHEED and confirms the structural order of the surface. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：139 / 142
页数：4
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