PARAMETRIC STUDY OF THE ETCHING OF SILICON IN SF6 MICROWAVE MULTIPOLAR PLASMAS: INTERPRETATION OF ETCHING MECHANISMS.

被引：0
|
作者：
Petit, B. [1 ]
Pelletier, J. [1 ]
机构：
[1] CNET, Meylan, Fr, CNET, Meylan, Fr
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 06期
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摘要：
40
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页码：825 / 834
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