Physically based modelling of the double-gate SOI transistor with thin semiconductor film

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作者：
Majkusiak, B. [1 ]
Janik, T. [1 ]
机构：
[1] Warsaw Univ of Technology, Warszawa, Poland
来源：
Electron Technology (Warsaw) | 1999年 / 32卷 / 01期
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页码：29 / 38
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