Double-gate Tri-active Layer Channel Amorphous-IGZO Thin Film Transistor for AMLCD Pixel Circuit

被引：0
|
作者：
Dargar, Shashi K. [1 ]
Srivastava, Viranjay M. [1 ]
机构：
[1] Univ KwaZulu Natal, Dept Elect Engn, Howard Coll, ZA-4041 Durban, South Africa
来源：
2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS-SPRING) | 2019年
关键词：
HIGH-MOBILITY; TFTS; PERFORMANCE; VOLTAGE;
D O I：
10.1109/piers-spring46901.2019.9017367
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Active Matrix Liquid Crystal Displays (AMLCDs) of high resolution such as Ultra-HD (7680 x 4320 pixels), density (more than 300 ppi), and refresh rate (higher than 240 Hz) are in latest trend. Amorphous-Indium Gallium Zinc Oxide Transistor (alpha-IGZO TFTs) has proven its prominence as switching element in pixel driving circuits of displays, to encompass those trends, improved high speed alpha-IGZO TFTs are required. Improved electrical characteristics have been obtained by single and double gate Tri-active layer (TAL) channel alpha-IGZO TFTs. In this present research work, authors have analyzed the performance of DG-TAL alpha-IGZO TFT which has three multi-stack layer (IGZO/ITO/ITO1) as channel and two gates. The proposed novel DG-TAL Thin Film Transistor and analysis of transfer characteristics have displayed enhanced electrical output parameters such as high capacitance (C-DI) 26.2 nF/cm(2), high mobility (mu(FE)) 16.93 cm(2)/V.s and steeper subthreshold swing (SS) 95 mV/decade. The superior electrical behavior of the device is promising for its application AMLCD pixel circuit.
引用
收藏
页码：2448 / 2453
页数：6
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