Double-gate Tri-active Layer Channel Amorphous-IGZO Thin Film Transistor for AMLCD Pixel Circuit

Active Matrix Liquid Crystal Displays (AMLCDs) of high resolution such as Ultra-HD (7680 x 4320 pixels), density (more than 300 ppi), and refresh rate (higher than 240 Hz) are in latest trend. Amorphous-Indium Gallium Zinc Oxide Transistor (alpha-IGZO TFTs) has proven its prominence as switching element in pixel driving circuits of displays, to encompass those trends, improved high speed alpha-IGZO TFTs are required. Improved electrical characteristics have been obtained by single and double gate Tri-active layer (TAL) channel alpha-IGZO TFTs. In this present research work, authors have analyzed the performance of DG-TAL alpha-IGZO TFT which has three multi-stack layer (IGZO/ITO/ITO1) as channel and two gates. The proposed novel DG-TAL Thin Film Transistor and analysis of transfer characteristics have displayed enhanced electrical output parameters such as high capacitance (C-DI) 26.2 nF/cm(2), high mobility (mu(FE)) 16.93 cm(2)/V.s and steeper subthreshold swing (SS) 95 mV/decade. The superior electrical behavior of the device is promising for its application AMLCD pixel circuit.