PHOTOELECTRIC EFFECT IN METAL - OXIDE - SEMICONDUCTOR STRUCTURES.

被引：0
|
作者：
Plotnikov, A.F.
Vavilov, V.S.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1973年 / 7卷 / 05期
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中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
Investigation was made of the photoelectric effect in metal - oxide - semiconductor (MOS) structures based on silicon. Certain features of this effect, associated with the charging of traps in the oxide by carriers injected from the semiconductor, were observed and interpreted.
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页码：599 / 603
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