Universal system for photoelectric characterisation of semiconductor structures

被引：8
|
作者：
Porebski, S
Machalica, P
Zajac, J
Borowicz, L
Kudla, A
Przewlocki, HM
机构：
[1] Ind Inst Elect, PL-00241 Warsaw, Poland
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
IEE PROCEEDINGS-SCIENCE MEASUREMENT AND TECHNOLOGY | 2003年 / 150卷 / 04期
关键词：
D O I：
10.1049/ip-smt:20030623
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A multifunctional system for the photoelectric measurement of semiconductor structures (MSPM) is presented. The system enables very accurate photocurrent measurements to be taken at levels as low as 10 fA. Measured structures can be biased by sequences of DC voltages and stimulated by fight beams of predefined wavelengths and powers. The software controls all the system actions allowing flexibility in retrieving data stored in the related databases.
引用
收藏
页码：148 / 152
页数：5
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