Effect of substrate crystalline morphology on the adhesion of plasma enhanced chemical vapor deposited thin silicon oxide coatings on polyamide

被引：0
|
作者：
机构：
[1] Rochat, G.
[2] Leterrier, Y.
[3] Plummer, C.J.G.
[4] Manson, J.-A.E.
[5] Szoszkiewicz, R.
[6] Kulik, A.J.
[7] Fayet, P.
来源：
Rochat, G. | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Crystalline structure of YSZ thin films deposited on Si(111) substrate by chemical vapor deposition
    Hwang, SC
    Lee, HG
    Shin, HS
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 1998, 15 (03) : 243 - 245
  • [42] Effect of rf bias (ion current density) on the hardness of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition
    Jin, Su B.
    Choi, Yoon S.
    Kim, Youn J.
    Choi, In S.
    Han, Jeon G.
    SURFACE & COATINGS TECHNOLOGY, 2010, 205 : S139 - S143
  • [43] Effects of various substrate materials on structural and optical properties of amorphous silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition
    Hang, Liangyi
    Liu, Weiguo
    Xu, Junqi
    CHINESE OPTICS LETTERS, 2020, 18 (08)
  • [44] Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias
    Furuta, Mamoru
    Hiramatsu, Takahiro
    Hirao, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 0502021 - 0502023
  • [45] Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition
    Cibert, C.
    Hidalgo, H.
    Champeaux, C.
    Tristant, P.
    Tixier, C.
    Desmaison, J.
    Catherinot, A.
    THIN SOLID FILMS, 2008, 516 (06) : 1290 - 1296
  • [46] Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation
    Cai, L
    Rohatgi, A
    Han, S
    May, G
    Zou, M
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 5885 - 5889
  • [47] Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation
    J Appl Phys, 11 pt 1 (5885):
  • [48] Effect of bipolar pulsed dc bias on the mechanical properties of silicon oxide thin film by plasma enhanced chemical vapor deposition
    Jin, Su B.
    Kim, Sung I.
    Choi, Yoon S.
    Choi, In S.
    Han, Jeon G.
    CURRENT APPLIED PHYSICS, 2011, 11 (04) : 1107 - 1110
  • [49] Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film
    Lim, SW
    Miyata, M
    Naito, T
    Shimogaki, Y
    Nakano, Y
    Tada, K
    Komiyama, H
    LOW-DIELECTRIC CONSTANT MATERIALS II, 1997, 443 : 143 - 148
  • [50] EFFECT OF SUBSTRATE BIAS ON SILICON THIN-FILM GROWTH IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION AT CRYOGENIC TEMPERATURES
    SHIN, H
    OKAMOTO, K
    MIYAZAKI, S
    HIROSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6B): : 1953 - 1957
12345