Relationship between plasma damage, SILC and gate-oxide reliability

被引：0

作者：

Cheung, K.P. ^{[1
]}

Lu, Q. ^{[1
]}

Ciampa, N.A. ^{[1
]}

Liu, C.T. ^{[1
]}

Chang, C.-P. ^{[1
]}

Colonell, J.I. ^{[1
]}

Lai, W.-Y.-C. ^{[1
]}

Liu, R. ^{[1
]}

Miner, J.F. ^{[1
]}

Vaidya, H. ^{[1
]}

Pai, C.-S. ^{[1
]}

Clemens, J.T. ^{[1
]}

机构：

[1] Bell Lab, Murray Hill, United States

来源：

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings | 1999年

关键词：

Electric breakdown - Electric potential - Electron traps - Gates (transistor) - Leakage currents - Plasma density - Radiation damage - Reliability;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Charging damage continue to be a serious problem for ultra-thin gate-oxide when the high-density plasma is used. The present work demonstrates that even when low-density plasma is used, charging damage is also a serious problem for ultra-thin gate-oxide. Two issues are highlighted. First, it is shown that the early part of the stress induced leakage current (SILC) growth curve is dominated by latent defect recreation. Second, the impact of plasma-charging damage on scaled gate-oxide reliability can be assessed by measuring first the very low-level increase of SILC from large capacitors.

引用

页码：137 / 140

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