Grazing-angle RBS and channelling analysis of BF2+ implantation damage in silicon

被引：0
|
作者：
机构：
[1] Lin, Chenglu
[2] Zhou, Zuyou
[3] Hemment, P.L.F.
[4] Li, Xiaoqin
[5] Yang, Genqin
[6] Zhu, Wenhua
[7] Zou, Shichang
来源：
Lin, Chenglu | 1600年 / Publ by Akademie-Verlag Berlin, Berlin, Germany卷 / 142期
关键词：
Boron fluoride - Channelling analysis - Grazing angle Rutherford backscattering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] GRAZING-ANGLE RBS AND CHANNELING ANALYSIS OF BF2+ IMPLANTATION DAMAGE IN SILICON
    LIN, CL
    ZHOU, ZY
    HEMMENT, PLF
    LI, XQ
    YANG, GQ
    ZHU, WH
    ZOU, SC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 142 (02): : 365 - 370
  • [2] NEAR-SURFACE DAMAGE CREATED IN SILICON BY BF2+ IMPLANTATION
    LI, XQ
    LIN, CL
    YANG, GQ
    ZHOU, ZY
    ZOU, SC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 589 - 592
  • [3] A STUDY OF LATTICE DAMAGE IN SILICON INDUCED BY BF2+ ION-IMPLANTATION
    PAEK, MC
    KWON, OJ
    LEE, JY
    IM, HB
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (08) : 4176 - 4180
  • [4] Low energy BF2+ ion implantation in silicon
    Sugita, Y
    Ishikawa, T
    Koshitaka, T
    Inada, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 1997, : 161 - 164
  • [5] Low-energy BF2+ ion implantation in silicon
    Hirano, D
    Ishikawa, T
    Kitahara, M
    Inada, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16, 1997, : 153 - 156
  • [6] DAMAGE ENHANCEMENT IN BF2+ ION-IMPLANTED SILICON
    LIN, CL
    LI, JH
    HEMMENT, PLF
    LI, XG
    YANG, GG
    ZHOU, ZY
    ZOU, SC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (05) : 632 - 634
  • [7] DYNAMIC SIMULATION OF DAMAGE ACCUMULATION DURING IMPLANTATION OF BF2+ MOLECULAR-IONS INTO CRYSTALLINE SILICON
    POSSELT, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 102 (1-4): : 167 - 172
  • [8] BF2+ ION-IMPLANTATION IN SILICON - EFFECTS OF THE IN-FLIGHT DISSOCIATION
    QUEIROLO, G
    BRESOLIN, C
    MEDA, L
    ANDERLE, M
    CANTERI, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : 777 - 780
  • [9] ON THE ROLE OF FLUORINE IN BF2+ IMPLANTED SILICON
    VIRDI, GS
    RAUTHAN, CMS
    PATHAK, BC
    KHOKLE, WS
    GUPTA, SK
    LAL, K
    SOLID-STATE ELECTRONICS, 1992, 35 (04) : 535 - 540
  • [10] DISLOCATIONS AND BUBBLES IN BF2+ IMPLANTED SILICON
    PIKE, GE
    CARR, MJ
    SCHUBERT, WK
    HILLS, CR
    NELSON, GC
    MCWHORTER, PJ
    CHARACTERIZATION OF THE STRUCTURE AND CHEMISTRY OF DEFECTS IN MATERIALS, 1989, 138 : 227 - 232
12345