Electrical properties of heteroepitaxial Ge films on Si(100)-2×1 surfaces

被引:0
|
作者
机构
[1] Kataoka, Yohichi
[2] Hida, Yuuhiro
[3] Ueba, Hiromu
[4] Tatsuyama, Chiei
来源
Kataoka, Yohichi | 1600年 / 28期
关键词
Semiconducting Germanium;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF HETEROEPITAXIAL GE FILMS ON SI(100)-2X1 SURFACES
    KATAOKA, Y
    HIDA, Y
    UEBA, H
    TATSUYAMA, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03): : 316 - 323
  • [2] STRUCTURAL-PROPERTIES OF HETEROEPITAXIAL GE FILMS ON A SI(100)-2X1 SURFACE
    KATAOKA, Y
    UEBA, H
    TATSUYAMA, C
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 749 - 759
  • [3] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
    ASAI, M
    UEBA, H
    TATSUYAMA, C
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583
  • [4] HETEROEPITAXIAL GROWTH AND SUPERSTRUCTURE OF GE ON SI(111)-7X7 AND (100)-2X1 SURFACES
    SHOJI, K
    HYODO, M
    UEBA, H
    TATSUYAMA, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (10): : 1482 - 1488
  • [5] HETEROEPITAXIAL GROWTH AND SUPERSTRUCTURE OF Ge ON Si(111) minus 7 multiplied by 7 AND (100) minus 2 multiplied by 1 SURFACES.
    Shoji, Katsuyuki
    Hyodo, Masahito
    Ueba, Hiromu
    Tatsuyama, Chiei
    1600, (22):
  • [6] Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)
    Fitzpatrick, P. R.
    Ekerdt, J. G.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (06): : 2366 - 2374
  • [7] Hydrogen effects on heteroepitaxial growth of Ge films on Si(111) surfaces by solid phase epitaxy
    Okada, M
    Muto, A
    Suzumura, I
    Ikeda, H
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12B): : 6970 - 6973
  • [8] HYDROGEN CHEMISORPTION ON 100 (2X1) SURFACES OF SI AND GE
    APPELBAUM, JA
    BARAFF, GA
    HAMANN, DR
    HAGSTRUM, HD
    SAKURAI, T
    SURFACE SCIENCE, 1978, 70 (01) : 654 - 673
  • [9] Heteroepitaxial sputtered Ge on Si (100): Nanostructure and interface morphology
    Pietralunga, S. M.
    Fere, M.
    Lanata, M.
    Piccinin, D.
    Radnoczi, G.
    Misjak, F.
    Lamperti, A.
    Martinelli, M.
    Ossi, P. M.
    EPL, 2009, 88 (02)
  • [10] Electrical properties of permalloy/Si (100) thin films
    Kharmouche, A.
    Cherrad, O.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (11)