Electrical properties of heteroepitaxial Ge films on Si(100)-2×1 surfaces

被引:0
|
作者
机构
[1] Kataoka, Yohichi
[2] Hida, Yuuhiro
[3] Ueba, Hiromu
[4] Tatsuyama, Chiei
来源
Kataoka, Yohichi | 1600年 / 28期
关键词
Semiconducting Germanium;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Energetics of Ge addimers on the Si(100) and Ge(100) surfaces: a comparative study
    Zhang, QM
    Wu, SY
    Zhang, ZY
    COMPUTATIONAL MATERIALS SCIENCE, 2002, 23 (1-4) : 48 - 54
  • [22] Structure of dimers at the C(100), Si(100) and Ge(100) surfaces
    Kang, HC
    SURFACE AND INTERFACE ANALYSIS, 1999, 28 (01) : 92 - 96
  • [23] Growth of heteroepitaxial diamond films on Si(100) and its applications
    Wang, SX
    RARE METAL MATERIALS AND ENGINEERING, 2001, 30 (06) : 440 - 443
  • [24] Growth of heteroepitaxial GaSb thin films on Si(100) substrates
    Nguyen T.
    Varhue W.
    Adams E.
    Lavoie M.
    Mongeon S.
    Journal of Materials Research, 2004, 19 (8) : 2315 - 2321
  • [25] Growth of heteroepitaxial diamond films on Si(100) and its applications
    Wang, Shuxia
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2001, 30 (06):
  • [26] Adsorption of Diatomic Interhalogens on the Si(100) and Ge(100) Surfaces
    Hou, Hsiao-Ying
    Wu, Hsin-Hua
    Chung, Jen-Yang
    Lin, Deng-Sung
    JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (27): : 13262 - 13267
  • [27] DISLOCATION GLIDE MOTION IN HETEROEPITAXIAL THIN-FILMS OF SI1-XGEX/SI(100)
    YAMASHITA, Y
    MAEDA, K
    FUJITA, K
    USAMI, N
    SUZUKI, K
    FUKATSU, S
    MERA, Y
    SHIRAKI, Y
    PHILOSOPHICAL MAGAZINE LETTERS, 1993, 67 (03) : 165 - 171
  • [28] STM investigation of the initial adsorption stage of Bi on Si(100)-(2 x 1) and Ge(100)-(2 x 1) surfaces
    Bulavenko, SY
    Koval, IF
    Melnik, PV
    Nakhodkin, NG
    Zandvliet, HJW
    SURFACE SCIENCE, 2001, 482 : 370 - 375
  • [30] Theory of water adsorption on SI and Ge(100)-2X1 surfaces.
    Konecny, R
    Foraker, AC
    Doren, DJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1998, 215 : U271 - U271