P-I-N PHOTODIODES MADE IN LASER-RECRYSTALLIZED SILICON-ON-INSULATOR.

被引：0
|
作者：
Colinge, Jean-Pierre [1 ]
机构：
[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 02期
关键词：
CRYSTALLIZATION - Laser Applications;
D O I：
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学科分类号：
摘要：
Lateral p-i-n photodiodes made in laser-recrystallized silicon-on-insulator are investigated. Dark reverse currents of 0. 1 pA/ mu m are obtained (5-V reverse voltage), as well as an efficiency of more than 5% in the green part of the visible spectrum. The influence of a back gate (the mechanical substrate) on the intrinsic zone of the diode is discussed. The carrier lifetime is found to be approximately 8 mu s in the intrinsic zone, and the photogenerated current is proportional to incident light power over more than 5 decades.
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页码：203 / 205
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