P-I-N PHOTODIODES MADE IN LASER-RECRYSTALLIZED SILICON-ON-INSULATOR.

被引：0

作者：

Colinge, Jean-Pierre ^{[1
]}

机构：

[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA

来源：

IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 02期

关键词：

CRYSTALLIZATION - Laser Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Lateral p-i-n photodiodes made in laser-recrystallized silicon-on-insulator are investigated. Dark reverse currents of 0. 1 pA/ mu m are obtained (5-V reverse voltage), as well as an efficiency of more than 5% in the green part of the visible spectrum. The influence of a back gate (the mechanical substrate) on the intrinsic zone of the diode is discussed. The carrier lifetime is found to be approximately 8 mu s in the intrinsic zone, and the photogenerated current is proportional to incident light power over more than 5 decades.

引用

页码：203 / 205

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