Layer-by-layer oxidation of silicon

被引：0
|
作者：
Hattori, T. [1 ]
Takahashi, K. [1 ]
Nohira, H. [1 ]
Ohmi, T. [2 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan
[2] New Indust. Creation Hatchery Center, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
来源：
Solid State Phenomena | 2000年 / 76-77卷
关键词：
Atomic force microscopy - Chemical bonds - Crystals - Energy gap - Interfaces (materials) - Morphology - Oxidation - Surface roughness - X ray photoelectron spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The layer-by-layer oxidation reaction occurs at the interface as a result of periodic changes in bonding nature of Si crystal at the interface. The layer-by-layer oxidation reaction are reflected in the morphology of oxide surface, distribution of interface states in silicon bandgap, valence band discontinuity at SiO2/Si interface, chemical shift of Si 2p spectrum for silicon oxide from that for bulk Si, and oxidation rate.
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页码：139 / 144
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