Layer-by-layer oxidation of silicon

被引：0

作者：

Hattori, T. ^{[1
]}

Takahashi, K. ^{[1
]}

Nohira, H. ^{[1
]}

Ohmi, T. ^{[2
]}

机构：

[1] Dept. of Elec. and Electron. Eng., Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan

[2] New Indust. Creation Hatchery Center, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

来源：

Solid State Phenomena | 2000年 / 76-77卷

关键词：

Atomic force microscopy - Chemical bonds - Crystals - Energy gap - Interfaces (materials) - Morphology - Oxidation - Surface roughness - X ray photoelectron spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The layer-by-layer oxidation reaction occurs at the interface as a result of periodic changes in bonding nature of Si crystal at the interface. The layer-by-layer oxidation reaction are reflected in the morphology of oxide surface, distribution of interface states in silicon bandgap, valence band discontinuity at SiO2/Si interface, chemical shift of Si 2p spectrum for silicon oxide from that for bulk Si, and oxidation rate.

引用

页码：139 / 144

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