Heteroepitaxial TiN film growth on Si(111) by low energy reactive ion beam epitaxy

被引：0
|
作者：
机构：
[1] Sano, Kenya
[2] Oose, Michihiro
[3] Kawakubo, Takashi
来源：
Sano, Kenya | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy
    Zakharov, ND
    Werner, P
    Gerth, G
    Schubert, L
    Sokolov, L
    Gösele, U
    JOURNAL OF CRYSTAL GROWTH, 2006, 290 (01) : 6 - 10
  • [32] LOW-TEMPERATURE POLYCRYSTALLINE SI FILM GROWTH ON AMORPHOUS INSULATORS BY REACTIVE ION-BEAM DEPOSITION
    YAMADA, H
    TORII, Y
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1106 - 1111
  • [33] GAAS HETEROEPITAXIAL GROWTH ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YODO, T
    TAMURA, M
    LOPEZ, M
    KAJIKAWA, Y
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) : 7630 - 7632
  • [34] HETEROEPITAXIAL GROWTH OF INAS ON MISORIENTED GAAS(111)B SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    TAKANO, Y
    IKEI, T
    HACHIYA, Y
    KISHIMOTO, Y
    PAK, K
    YONEZU, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9A): : L1223 - L1225
  • [35] Hydrogen effects on heteroepitaxial growth of Ge films on Si(111) surfaces by solid phase epitaxy
    Okada, M
    Muto, A
    Suzumura, I
    Ikeda, H
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12B): : 6970 - 6973
  • [36] Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane
    Chen, J.
    Steckl, A.J.
    Loboda, M.J.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (03):
  • [37] Selective area growth of GaN on Si(111) by chemical beam epitaxy
    Kim, E
    Tempez, A
    Medelci, N
    Berishev, I
    Bensaoula, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1130 - 1134
  • [38] Erratum to: “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy”
    P. E. Teterin
    D. V. Averyanov
    Yu. G. Sadofyev
    O. E. Parfenov
    I. A. Likhachev
    V. G. Storchak
    Semiconductors, 2015, 49 : 419 - 419
  • [39] Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
    Nikishin, SA
    Faleev, NN
    Zubrilov, AS
    Antipov, VG
    Temkin, H
    APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3028 - 3030
  • [40] Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane
    Chen, J
    Steckl, AJ
    Loboda, MJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1305 - 1308
12345