共 50 条
- [1] HETEROEPITAXIAL TIN FILM GROWTH ON SI(111) BY LOW-ENERGY REACTIVE ION-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (6A): : 3266 - 3270
- [3] Heteroepitaxial TiN films grown by reactive ion beam epitaxy at room temperature Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (11 B):
- [4] HETEROEPITAXIAL TIN FILMS GROWN BY REACTIVE ION-BEAM EPITAXY AT ROOM-TEMPERATURE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (11B): : L1692 - L1694
- [6] Epitaxial growth of α-Fe film on Si(111) substrate by low-energy direct ion beam deposition Shimizu, Saburo, 1600, (32):
- [9] Heteroepitaxial growth of 3C-SiC on Si(111) by solid source molecular beam epitaxy Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2007, 27 (01): : 5 - 9
- [10] Surface reconstruction induced by a pulsed low-energy ion beam during Si(111) molecular beam epitaxy Surface Science, 1999, 425 (02): : 185 - 194