Heteroepitaxial TiN film growth on Si(111) by low energy reactive ion beam epitaxy

被引:0
|
作者
机构
[1] Sano, Kenya
[2] Oose, Michihiro
[3] Kawakubo, Takashi
来源
Sano, Kenya | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [1] HETEROEPITAXIAL TIN FILM GROWTH ON SI(111) BY LOW-ENERGY REACTIVE ION-BEAM EPITAXY
    SANO, K
    OOSE, M
    KAWAKUBO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (6A): : 3266 - 3270
  • [2] LOW-TEMPERATURE HETEROEPITAXIAL FILM GROWTH OF SI ON SAPPHIRE BY REACTIVE ION-BEAM DEPOSITION
    YAMADA, H
    TORII, Y
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2298 - 2301
  • [3] Heteroepitaxial TiN films grown by reactive ion beam epitaxy at room temperature
    Kawakubo, Takashi
    Sano, Kenya
    Oose, Michihiro
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (11 B):
  • [4] HETEROEPITAXIAL TIN FILMS GROWN BY REACTIVE ION-BEAM EPITAXY AT ROOM-TEMPERATURE
    KAWAKUBO, T
    SANO, K
    OOSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (11B): : L1692 - L1694
  • [7] β-SiC growth on Si by reactive-ion molecular beam epitaxy
    Kuzmik, J
    ACTA PHYSICA SLOVACA, 2000, 50 (05) : 545 - 548
  • [8] LOW-TEMPERATURE FILM GROWTH OF SI BY REACTIVE ION-BEAM DEPOSITION
    YAMADA, H
    TORII, Y
    APPLIED PHYSICS LETTERS, 1987, 50 (07) : 386 - 388
  • [9] Heteroepitaxial growth of 3C-SiC on Si(111) by solid source molecular beam epitaxy
    Liu, Jinfeng
    Liu, Zhongliang
    Wang, Kefan
    Xu, Pengshou
    Tang, Honggao
    Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2007, 27 (01): : 5 - 9
  • [10] Surface reconstruction induced by a pulsed low-energy ion beam during Si(111) molecular beam epitaxy
    Dvurechenskii, A.V.
    Zinovyev, V.A.
    Markov, V.A.
    Kudryavtsev, V.A.
    Surface Science, 1999, 425 (02): : 185 - 194