LOW-TEMPERATURE HETEROEPITAXIAL FILM GROWTH OF SI ON SAPPHIRE BY REACTIVE ION-BEAM DEPOSITION

被引：12

|

作者：

YAMADA, H

TORII, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2298 / 2301

页数：4

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