Characterization of trap states at silicon-on-insulator (SOI)/buried oxide (BOX) interface by back gate transconductance characteristics in SOI MOSFETs

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[1] Nakajima, Yoshikata
[2] Tomita, Hideki
[3] Aoto, Kenichi
[4] Ito, Nobuhiro
[5] Hanajiri, Tatsuro
[6] Toyabe, Toru
[7] Morikawa, Takitaro
[8] Sugano, Takuo
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Nakajima, Y. (dl0200010@toyonet.toyo.ac.jp) | 2004年 / Japan Society of Applied Physics卷 / 42期
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