共 50 条
- [41] SELECTIVE GROWTH OF P+-GAAS BY METALORGANIC MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 1049 - 1050FURUHATA, NSHIMAWAKI, HOKAMOTO, A
- [42] STABILITY OF GAAS OXIDE UNDER METALORGANIC MOLECULAR-BEAM EPITAXY PROCESSJOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 404 - 408HIRATANI, YSASAKI, MYOSHIDA, SYAMADA, M
- [43] SELECTIVE GROWTH-MECHANISM OF GAAS IN METALORGANIC MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1991, 112 (01) : 1 - 6FURUHATA, NOKAMOTO, A
- [44] Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxyJOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (07) : 900 - 906Ok, YWChoi, CJSeong, TYUesugi, KSuemune, I
- [45] LOW-TEMPERATURE SELECTIVE EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND AMINO AS IN METALORGANIC MOLECULAR-BEAM EPITAXYJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (6A): : 3500 - 3504HIDAKA, TSUEMUNE, I
- [46] THE EFFECTS OF ARSENIC OVERPRESSURE IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS AND INASJOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 195 - 198TU, CWLIANG, BWCHIN, TP
- [47] Catalytic precracking of amino-As in metalorganic molecular-beam epitaxy of GaAsJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (9 A): : 1272 - 1275Koui, TomoakiSuemune, IkuoMiyakoshi, KaoruFujii, KazuyukiYamanishi, Masamichi
- [49] INCORPORATION OF CARBON IN HEAVILY DOPED ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1990, 57 (03) : 294 - 296ABERNATHY, CRPEARTON, SJMANASREH, MOFISCHER, DWTALWAR, DN
- [50] SN DOPING OF GAAS AND ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 827 - 830ABERNATHY, CRPEARTON, SJHA, NT
