THE EFFECTS OF ARSENIC OVERPRESSURE IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS AND INAS

被引：4
|
作者：
TU, CW
LIANG, BW
CHIN, TP
机构：
[1] Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90360-W
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaAs and InAS grown by metalorganic molecular beam epitaxy (MOMBE) using trimethyl compounds and arsenic are compared. Not only the substrate temperature but also the arsenic overpressure play a very important role in affecting the growth rates. A simple growth kinetics model for MOMBE of InAs can explain quantitatively the growth behavior for various substrate temperatures and arsenic pressure. © 1990.
引用
收藏
页码：195 / 198
页数：4
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