Ion-modulation optoelectronic neuromorphic devices:mechanisms, characteristics, and applications

被引:0
|
作者
Xiaohan Meng [1 ,2 ]
Runsheng Gao [1 ,3 ]
Xiaojian Zhu [1 ,3 ]
RunWei Li [1 ,3 ]
机构
[1] CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
[2] School of Physical Science and Technology, ShanghaiTech University
[3] Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of
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中图分类号
TN15 [光电器件、光电管];
学科分类号
0803 ;
摘要
The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computation, leading to high energy consumption, significant latency, and reduced operational efficiency. Neuromorphic computing,inspired by the architecture of the human brain, offers a promising alternative by integrating memory and computational functions, enabling parallel, high-speed, and energy-efficient information processing. Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multidimensional control strategies. This review provides a comprehensive overview of recent progress in ion-modulation optoelectronic neuromorphic devices. It elucidates the key mechanisms underlying ionic modulation of light fields, including ion migration dynamics and capture and release of charge through ions. Furthermore, the synthesis of active materials and the properties of these devices are analyzed in detail. The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems, neuromorphic computing, and other bionic fields. Finally, the existing challenges and future directions for the development of optoelectronic neuromorphic devices are discussed, providing critical insights for advancing this promising field.
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页码:27 / 40
页数:14
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