Memory Devices for Flexible and Neuromorphic Device Applications

被引:16
|
作者
Kim, Dongshin [1 ]
Kim, Ik-Jyae [1 ]
Lee, Jang-Sik [1 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea
基金
新加坡国家研究基金会;
关键词
2D materials; electrochemical devices; flexible electronics; memory devices; neuromorphic applications; perovskite materials; ORGANOMETAL TRIHALIDE PEROVSKITE; TERM SYNAPTIC PLASTICITY; GRAPHENE OXIDE SYNTHESIS; BLACK PHOSPHORUS; SOL-GEL; ARTIFICIAL SYNAPSES; HALIDE PEROVSKITES; HIGH-CAPACITY; THIN-FILMS; NETWORKS;
D O I
10.1002/aisy.202000206
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Recently, consumer electronics have moved toward data-centric applications due to the development of smart electronic devices. Moreover, electronic devices have become highly portable, wearable, and lightweight. These devices require flexible data storage with high density. Furthermore, with the growing demand for larger memory capacity, faster processing speed, and complex data computation, neuromorphic devices have emerged as the next-generation memory technologies. To meet the needs of next-generation memory devices, memory devices based on emerging materials such as 2D, electrochemical, and perovskite materials are suggested. Herein, the recent progress in emerging materials-based memory devices for flexible and neuromorphic device applications is reviewed. First, the functions and mechanisms of emerging material-based memory devices are described. Second, applications for emerging material-based memory devices are reviewed. Finally, the challenges and prospects for the emerging material-based memory devices are discussed.
引用
收藏
页数:16
相关论文
共 50 条
  • [1] Neuromorphic Devices, Circuits, and Their Applications in Flexible Electronics
    Wang, Feiyu
    Zhang, Tongju
    Dou, Chunmeng
    Shi, Yi
    Pan, Lijia
    IEEE Journal on Flexible Electronics, 2024, 3 (01): : 42 - 56
  • [2] MXene-Based Flexible Memory and Neuromorphic Devices
    Li, Yan
    Ding, Guanglong
    Zhai, Yongbiao
    Lv, Ziyu
    Yan, Yan
    Xue, Shuangmei
    Zhou, Kui
    Zhang, Meng
    Zhang, Yutong
    Sun, Qi-Jun
    Liu, Yi
    Roy, Vellaisamy A. L.
    Zhou, Ye
    Han, Su-Ting
    SMALL, 2025,
  • [3] Ferroelectric Transistors for Memory and Neuromorphic Device Applications
    Kim, Ik-Jyae
    Lee, Jang-Sik
    ADVANCED MATERIALS, 2023, 35 (22)
  • [4] Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-memory Applications
    Cho, Seongjae
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022, 22 (01) : 30 - 46
  • [5] Mott Memory and Neuromorphic Devices
    Zhou, You
    Ramanathan, Shriram
    PROCEEDINGS OF THE IEEE, 2015, 103 (08) : 1289 - 1310
  • [6] Ferroelectric Thin-Film Transistors for Memory and Neuromorphic Device Applications
    Lee, Jang-Sik
    TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22), 2022, : 76 - 77
  • [7] Amorphous GaOx based charge trap memory device for neuromorphic applications
    Van Dijck, C.
    Maudet, F.
    Dubourdieu, C.
    Deshpande, V.
    SOLID-STATE ELECTRONICS, 2023, 207
  • [8] Optoelectronic neuromorphic devices and their applications
    Shen Liu-Feng
    Hu Ling-Xiang
    Kang Feng-Wen
    Ye Yu-Min
    Zhuge Fei
    ACTA PHYSICA SINICA, 2022, 71 (14)
  • [9] Emerging Memory Devices for Neuromorphic Computing
    Upadhyay, Novnidhi K.
    Jiang, Hao
    Wang, Zhongrui
    Asapu, Shiva
    Xia, Qiangfei
    Yang, J. Joshua
    ADVANCED MATERIALS TECHNOLOGIES, 2019, 4 (04):
  • [10] Resistive Switching in Organic Memory Devices for Flexible Applications
    Huang, Ru
    Cai, Yimao
    Liu, Yefan
    Bai, Wenliang
    Kuang, Yongbian
    Wang, Yangyuan
    2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2014, : 838 - 841