Evaluation of hot carrier effect of SiGe HBT

被引：0
|
作者：
Lin, Xiao-Ling [1 ]
Kong, Xue-Dong [2 ]
En, Yun-Fei [2 ]
Zhang, Xiao-Wen [2 ]
Yao, Ruo-He [1 ]
机构：
[1] School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
[2] National Key Laboratory for Reliability Physics and Application Technology of Electronic Product, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510610, China
来源：
Huanan Ligong Daxue Xuebao/Journal of South China University of Technology (Natural Science) | 2009年 / 37卷 / 05期
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页码：23 / 26
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