Hot carrier reliability of a SiGe/Si hetero-interface in SiGe/Si-hetero-MOSFETs

被引：0
|
作者：
Tsuchiya, T [1 ]
Murota, J [1 ]
机构：
[1] Shimane Univ, Interdisciplinary Fac Sci & Technol, Matsue, Shimane 6908504, Japan
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The density of hetero -interface -traps in a SiGe/Si heterostructure is successfully measured using a newly established charge pumping technique in a SiGe-channel pMOSFET, without interference from the gate oxide interface traps, and I good correlation between the measured density of hetero-interface-traps and the low frequency noise level in drain current flowing in the SiGe-channel is obtained. Moreover, it is experimentally shown that hot carrier degradation occurs in the SiGc/Si heterostructure, and the density of traps generated is charge pumping technique . estimated Using the new char These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.
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页码：2120 / 2124
页数：5
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