Growth of bulk GaN crystals by the Na-flux point seed technique

被引：0
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作者：
Imade, Mamoru [1 ]
Maruyama, Mihoko [1 ]
Yoshimura, Masashi [1 ]
Mori, Yusuke [1 ]
机构：
[1] Division of Electric, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
来源：
Japanese Journal of Applied Physics | 2014年 / 53卷 / 5 SPEC. ISSUE 1期
关键词：
712.1 Semiconducting Materials - 933.1.1 Crystal Lattice;
D O I：
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学科分类号：
摘要：
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