Continuous and analytical surface potential model for SOI LDMOS

被引：0
|
作者：
Xu, Wenjie [1 ]
Sun, Lingling [1 ]
Liu, Jun [1 ]
Li, Wenjun [1 ]
Zhang, Haipeng [1 ]
Wu, Yanming [1 ]
He, Jia [1 ]
机构：
[1] Microelectronic CAD Center, Hangzhou Dianzi University, Hangzhou 310017, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 11期
关键词：
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页码：1712 / 1716
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